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樊帅伟个人简介

作者:    时间:2023-03-15    浏览:

  • 姓名:樊帅伟

  • 职称:副教授

  • 毕业院校:华中科技大学

  • 学历: 研究生

  • 学位: 博士

  • 所在单位:理学院

  • 学科: 物理学

  • 办公地点: L1640

  • 联系方式:18671713752

  • 电子邮箱:phyfsw@ctgu.edu.cn

     

  • 个人简介:(300-500字)

副教授、博士、硕士生导师,2009年毕业于华中科技大学物理学院凝聚态物理专业,获理学博士学位。主要讲授课程《计算物理》、《热学》和《大学物理》等;

主要从事新型功能材料的设计理论研究,研究领域如下:

1)二维材料、磁性材料、半金属材料的设计研究;

2)缺陷对半导体材料电子结构、磁、光和电学性质调控研究;

3)宽禁带半导体的透明导电性研究

已在Applied Physics LettersApplied Surface ScienceJ. Phys. Chem. CJournal of Applied Physics等学术期刊发表相关领域的研究论文五十余篇。

  • 主持/参与的科研项目:

1.主持完成国家自然科学基金《非金属元素掺杂的半导体材料磁性及其机制的研究》。项目编号:11174179

2. 主持完成湖北省自然科学基金《缺陷对二维单层半导体材料性质影响研究》项目编号:2017CFB527

  • 学术论文:

    [1]S. W. Fan, Y. Chen and L. Yang, Transparency and p-Type Conductivity of BeSe Doped with Group VA Atoms: A Hybrid Functional Study, J. Phys. Chem. C 126, 19446-19454 (2022).

    [2]Y. Chen, S. W. Fan and P. Xu, Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives, Appl. Phys. Lett. 121, 252102 (2022).

    [3]S. W. Fan and Y. Chen, The electronic structures and p-type performance of group IA and VA atoms in NiO: A first principles study, J. Appl. Phys. 131, 135701 (2022).

    [4]Y. Chen, S. W. Fan and G. Y. Gao, Design ambipolar conductivity on wide-gap semiconductors: The case of Al- and Na-doped CaS, Mater. Sci. Semicond. Process. 151, 107024 (2022).

    [5]Y. Chen, et al., Promising transparency and p-type conductivity of Li, Na, K and Rb-doped CaS: A first-principles study, Mater. Sci. Eng.: B 285, 115953 (2022).

    [6]Y. Chen, S. W. Fan and G. Y. Gao, The SrS doped with Cl and K: a promising ambipolar semiconductor for transparent electronics application, J. Phys. D: Appl. Phys. 55, 455108 (2022).

    [7]S. W. Fan, et al., The origin of the P-type conductivity for Cu and Ag-doped NiO: Density functional theory study, Mater. Today Commun. 33, 104552 (2022).

    [8]Z. Wang, et al., Monolayer Mo2B: A non-magnetic metal and potential application as anode material for ion batteries and catalyst for hydrogen evolution, Appl. Surf. Sci. 538, 148026 (2021).

    [9]Z. L. Wang and S. W. Fan, Beryllium sulfur doped with N, Li and Na: Promising p-type transparent semiconductor, Mater. Today Commun. 28, 102513 (2021).

    [10]S. Fan, et al., The effects of native defects and carbon dopant on AlP nanosheet, Comput. Mater. Sci. 173, 109458 (2020).

    [11]S. W. Fan, et al., Boron: An effective dopant for aluminum phosphide, EPL 122, 67007 (2018).

    [12]S. W. Fan, X. N. Huang and K. L. Yao, Boron doped GaN and InN: Potential candidates for spintronics, J. Appl. Phys. 121, 073905 (2017).

    [13]S. Fan, et al., Magnetism and electronic structures for B-doped bulk and surface AlN: Ab initio calculations, Appl. Phys. Express 8, 045802 (2015).

    [14]S. W. Fan, et al., Half-metallic ferromagnetism in wurtzite ScM (M=C, Si, Ge, and Sn): Ab initio calculations, Appl. Phys. Lett. 102, 022404 (2013).

    [15]S. W. Fan, K. L. Yao and Z. L. Liu, Half-metallic ferromagnetism in C-doped ZnS: Density functional calculations, Appl. Phys. Lett. 94, 152506 (2009).

 

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